Parametric results for: UF7641 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Length Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Output Current-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 60 ULTRA LOW RESISTANCE 24 ULTRA-LOW RESISTANCE 66

1,059 hits Apply

121.0 mJ 3 160.0 mJ 2 231.0 mJ 3 267.0 mJ 2 300.0 mJ 10 520.0 mJ 8 1153.0 mJ 2

Min (mJ) - Max (mJ)

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CATHODE 1 DRAIN 804 ISOLATED 4

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Configuration (3)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 15 SINGLE 54 SINGLE WITH BUILT-IN DIODE 890

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DS Breakdown Voltage-Min (12)

12 V 2 20 V 19 30 V 185 50 V 5 55 V 257 60 V 139 80 V 37 100 V 183 115 V 2 150 V 37 200 V 21 400 V 18

Min (V) - Max (V)

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Drain Current-Max (ID) (50)

2.2 A 1 2.5 A 1 2.6 A 7 3 A 11 3.3 A 1 3.5 A 1 4.7 A 3 5 A 8 5.5 A 13 6 A 13 6.5 A 17 7.5 A 4 8 A 4 10 A 27 11 A 6 11.5 A 4 12 A 10 13 A 11 14 A 9 15 A 14 16 A 11 17 A 14 18 A 25 19 A 12 20 A 138 22 A 18 23 A 3 29 A 13 31 A 4 33 A 9 35 A 21 38 A 12 39 A 14 42 A 12 43 A 12 44 A 21 47 A 23 49 A 11 50 A 3 51 A 12 52 A 10 53 A 7 56 A 53 59 A 8 60 A 11 62 A 8 66 A 10 70 A 13 71 A 9 75 A 270

Min (A) - Max (A)

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Drain-source On Resistance-Max (50)

6.5 mΩ 14 7 mΩ 27 8 mΩ 42 8.5 mΩ 12 9 mΩ 21 10 mΩ 41 12 mΩ 23 12.5 mΩ 12 14 mΩ 57 15 mΩ 14 16 mΩ 39 17 mΩ 16 19 mΩ 29 23 mΩ 27 24 mΩ 9 25 mΩ 50 26 mΩ 22 27 mΩ 11 28 mΩ 19 29 mΩ 9 30 mΩ 32 32 mΩ 6 33 mΩ 15 34 mΩ 12 35 mΩ 17 36 mΩ 12 37 mΩ 12 39 mΩ 16 40 mΩ 27 41 mΩ 14 42 mΩ 12 43 mΩ 9 55 mΩ 13 61 mΩ 8 64 mΩ 11 70 mΩ 25 71 mΩ 8 72 mΩ 13 75 mΩ 8 80 mΩ 14 89 mΩ 9 90 mΩ 35 110 mΩ 9 117 mΩ 13 125 mΩ 7 150 mΩ 7 168 mΩ 12 275 mΩ 6 550 mΩ 8 1 Ω 10

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 962

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MS-012AA 65 TO-220AB 216 TO-247 54 TO-251 2 TO-251AA 63 TO-252 7 TO-252AA 163 TO-261AA 6 TO-262AA 48 TO-263AB 281 TO-276AA 4

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R-CBCC-N3 8 R-PDSO-G4 16 R-PDSO-G8 67 R-PSFM-T2 3 R-PSFM-T3 272 R-PSIP-T3 113 R-PSSO-G2 451

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e0 420 e3 365

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27.95 mm 1 30.5 mm 1 33.85 mm 1

Min (mm) - Max (mm)

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Manufacturer (10)

Fairchild Semiconductor Corporation 319 Harris Semiconductor 108 Intersil Corporation 257 Microsemi Corporation 3 onsemi 46 Panasonic Electronic Components 3 Rochester Electronics LLC 206 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4 Unisonic Technologies Co Ltd 109

1,059 hits Apply

1 173 NOT APPLICABLE 47 NOT SPECIFIED 72

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Number of Elements (2)

1 944 2 15

Min - Max

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Number of Terminals (4)

2 454 3 393 4 16 8 67

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ENHANCEMENT MODE 962

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60.0 °C 3 150.0 °C 116 175.0 °C 534

Min (°C) - Max (°C)

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-55.0 °C 13 -40.0 °C 3 -20.0 °C 3

Min (°C) - Max (°C)

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75 A 3

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CERAMIC, METAL-SEALED COFIRED 8 PLASTIC/EPOXY 922

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RECTANGULAR 930

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CHIP CARRIER 8 FLANGE MOUNT 275 IN-LINE 113 SMALL OUTLINE 534

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Active 357 End Of Life 4 Obsolete 443 Transferred 255

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No 42 Yes 234

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245 13 260 75 NOT APPLICABLE 47 NOT SPECIFIED 197

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Polarity/Channel Type (1)

N-CHANNEL 962

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35 W 7 45 W 6 94 W 8 110 W 7 111 W 8 124 W 8 215 W 8

Min (W) - Max (W)

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1.1 W 10 2.5 W 47 35 W 10 38 W 5 41 W 6 44 W 2 45 W 22 49 W 14 50 W 7 55 W 15 60 W 1 64 W 7 65 W 2 70 W 18 75 W 21 80 W 2 85 W 20 90 W 14 93 W 12 94 W 9 100 W 11 105 W 12 110 W 28 111 W 8 115 W 9 120 W 11 124 W 9 125 W 17 128 W 11 130 W 3 145 W 29 150 W 17 155 W 7 165 W 6 175 W 26 180 W 15 183 W 1 200 W 38 215 W 8 225 W 4 230 W 17 260 W 6 270 W 26 275 W 2 285 W 8 288.5 W 1 310 W 29 325 W 17 500 W 3 515 W 4

Min (W) - Max (W)

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Surface Mount (2)

NO 409 YES 554

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