Parametric results for: TSD4M351V under Power Field-Effect Transistors

All Filters Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Power Dissipation-Max (Abs) Drain Current-Max (ID) (1)

50 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

STMicroelectronics 1

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Number of Elements (1)

1 1

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150.0 °C 1

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Obsolete 1

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500 W 1

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