Parametric results for: TPS1110 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

7 V 3

3 hits Apply

Drain Current-Max (ID) (1)

6 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

65 mΩ 1 75 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

MS-012AA 2

3 hits Apply

R-PDSO-G8 2 R-XUUC-N6 1

3 hits Apply

Manufacturer (1)

Texas Instruments 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

6 1 8 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 1

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 2 UNCASED CHIP 1

3 hits Apply

Obsolete 3

3 hits Apply

No 2

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

1.3 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply