Parametric results for: TPN2CN03UGUG under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

21.0 mJ 2 39.0 mJ 1 126.0 mJ 2

Min (mJ) - Max (mJ)

29 hits Apply

DRAIN 9

29 hits Apply

Configuration (2)

SINGLE 8 SINGLE WITH BUILT-IN DIODE 9

29 hits Apply

DS Breakdown Voltage-Min (4)

30 V 4 40 V 2 60 V 2 250 V 1

Min (V) - Max (V)

29 hits Apply

Drain Current-Max (ID) (5)

5.6 A 1 9 A 2 21 A 2 45 A 6 100 A 6

Min (A) - Max (A)

29 hits Apply

Drain-source On Resistance-Max (5)

2.3 mΩ 2 3.6 mΩ 2 4.1 mΩ 2 64 mΩ 2 198 mΩ 1

Min (Ω) - Max (Ω)

29 hits Apply

METAL-OXIDE SEMICONDUCTOR 17

29 hits Apply

14 pF 2 50 pF 1 120 pF 2 122 pF 2 160 pF 2

Min (pF) - Max (pF)

29 hits Apply

S-PDSO-F8 9

29 hits Apply

Manufacturer (2)

Continental Device India Ltd 4 Toshiba America Electronic Components 25

29 hits Apply

Number of Elements (1)

1 17

29 hits Apply

Number of Terminals (1)

8 9

29 hits Apply

ENHANCEMENT MODE 17

29 hits Apply

150.0 °C 13 175.0 °C 2

Min (°C) - Max (°C)

29 hits Apply

PLASTIC/EPOXY 9

29 hits Apply

SQUARE 9

29 hits Apply

SMALL OUTLINE 9

29 hits Apply

Active 26 End Of Life 3

29 hits Apply

Yes 4

29 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 17

29 hits Apply

18 W 4 35 W 2 42 W 7 104 W 2

Min (W) - Max (W)

29 hits Apply

Surface Mount (1)

YES 17

29 hits Apply