Parametric results for: TPM2626-30 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

15 V 2

2 hits Apply

Drain Current-Max (ID) (1)

26 A 2

2 hits Apply

JUNCTION 1 METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

Highest Frequency Band (1)

S BAND 2

2 hits Apply

R-CDFM-F2 2

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

175.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

No 1

2 hits Apply

240 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

100 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply