Parametric results for: TPIC2701 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

22.0 mJ 3

4 hits Apply

Configuration (2)

COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE 2 COMPLEX 1

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

4 hits Apply

Drain Current-Max (ID) (1)

500 mA 3

4 hits Apply

Drain-source On Resistance-Max (2)

800 mΩ 1 900 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MS-001BB 1

4 hits Apply

R-GDIP-T24 2 R-PDIP-T16 1

4 hits Apply

Manufacturer (1)

Texas Instruments 4

4 hits Apply

Number of Elements (1)

7 3

4 hits Apply

Number of Terminals (2)

16 1 24 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

125.0 °C 1 150.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

CERAMIC, GLASS-SEALED 2 PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 3

4 hits Apply

IN-LINE 3

4 hits Apply

Obsolete 4

4 hits Apply

No 2

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.4 W 1 2.66 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply