Parametric results for: TP89SCS2SATR under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

28.0 mJ 1

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

15 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

9.1 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

52 pF 1

4 hits Apply

R-PDSO-G8 2

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

8 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 4

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

1.9 W 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply