Parametric results for: TP65H070LDG under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN MOSFET AND DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

650 V 1

1 hit Apply

Drain Current-Max (ID) (1)

25 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

85 mΩ 1

1 hit Apply

JUNCTION CASCODE 1

1 hit Apply

4.5 pF 1

1 hit Apply

S-PSSO-N2 1

1 hit Apply

Manufacturer (1)

Transphorm Inc 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SQUARE 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

96 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply