Parametric results for: TP2635N3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 1 LOGIC LEVEL COMPATIBLE 12

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 13

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DS Breakdown Voltage-Min (1)

350 V 13

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Drain Current-Max (ID) (1)

180 mA 13

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Drain-source On Resistance-Max (1)

15 Ω 13

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METAL-OXIDE SEMICONDUCTOR 13

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12 pF 13

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TO-92 13

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O-PBCY-T3 12 O-PBCY-W3 1

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e0 1 e3 2

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Manufacturer (2)

Microchip Technology Inc 6 Supertex Inc 7

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Number of Elements (1)

1 13

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Number of Terminals (1)

3 13

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ENHANCEMENT MODE 13

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150.0 °C 13

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-55.0 °C 12

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PLASTIC/EPOXY 13

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ROUND 13

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CYLINDRICAL 13

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Active 6 Obsolete 1 Transferred 6

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Yes 1

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Polarity/Channel Type (1)

P-CHANNEL 13

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1 W 13

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1 W 12 1.3 W 1

Min (W) - Max (W)

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Surface Mount (1)

NO 13

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