Parametric results for: TP2104N3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 15 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 2 LOW THRESHOLD 2

30 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 30

30 hits Apply

DS Breakdown Voltage-Min (1)

40 V 30

30 hits Apply

Drain Current-Max (ID) (2)

175 mA 13 250 mA 17

Min (A) - Max (A)

30 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 30

30 hits Apply

METAL-OXIDE SEMICONDUCTOR 30

30 hits Apply

10 pF 30

30 hits Apply

TO-92 30

30 hits Apply

O-PBCY-T3 28 O-PBCY-W3 2

30 hits Apply

e0 17 e3 2

30 hits Apply

Manufacturer (2)

Microchip Technology Inc 7 Supertex Inc 23

30 hits Apply

Number of Elements (1)

1 30

30 hits Apply

Number of Terminals (1)

3 30

30 hits Apply

ENHANCEMENT MODE 30

30 hits Apply

150.0 °C 10

30 hits Apply

-55.0 °C 9

30 hits Apply

PLASTIC/EPOXY 30

30 hits Apply

ROUND 30

30 hits Apply

CYLINDRICAL 30

30 hits Apply

Active 7 Obsolete 17 Transferred 6

30 hits Apply

Yes 2

30 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 30

30 hits Apply

740 mW 3

30 hits Apply

740 mW 4

30 hits Apply

Surface Mount (1)

NO 30

30 hits Apply