Parametric results for: TP0620N3-G under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE, LOGIC LEVEL COMPATIBLE 11 LOW THRESHOLD 1

14 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

14 hits Apply

DS Breakdown Voltage-Min (1)

200 V 12

14 hits Apply

Drain Current-Max (ID) (1)

175 mA 12

14 hits Apply

Drain-source On Resistance-Max (1)

12 Ω 12

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

14 hits Apply

35 pF 12

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TO-92 12

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O-PBCY-T3 12

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e3 3

14 hits Apply

Manufacturer (2)

Microchip Technology Inc 7 Supertex Inc 7

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Number of Elements (1)

1 12

14 hits Apply

Number of Terminals (1)

3 12

14 hits Apply

ENHANCEMENT MODE 12

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150.0 °C 12

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-55.0 °C 12

14 hits Apply

PLASTIC/EPOXY 12

14 hits Apply

ROUND 12

14 hits Apply

CYLINDRICAL 12

14 hits Apply

Active 6 Transferred 6 Unknown 2

14 hits Apply

Yes 2

14 hits Apply

250 1 260 1

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 12

14 hits Apply

1 W 12

14 hits Apply

1 W 12

14 hits Apply

Surface Mount (1)

NO 12

14 hits Apply