Parametric results for: TN2106N3-GP013 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

2 hits Apply

Drain Current-Max (ID) (1)

1.2 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

350 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

65 pF 2

2 hits Apply

TO-92 2

2 hits Apply

O-PBCY-T3 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

ROUND 2

2 hits Apply

CYLINDRICAL 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

740 mW 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply