Parametric results for: TN0606N3-G under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 2

14 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

60 V 14

14 hits Apply

Drain Current-Max (ID) (1)

500 mA 14

14 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

35 pF 14

14 hits Apply

TO-92 14

14 hits Apply

O-PBCY-T3 14

14 hits Apply

e3 2

14 hits Apply

Manufacturer (2)

Microchip Technology Inc 8 Supertex Inc 6

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

3 14

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

150.0 °C 9

14 hits Apply

-55.0 °C 9

14 hits Apply

PLASTIC/EPOXY 14

14 hits Apply

ROUND 14

14 hits Apply

CYLINDRICAL 14

14 hits Apply

Active 8 Transferred 6

14 hits Apply

Yes 1

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

1 W 3

14 hits Apply

1 W 4

14 hits Apply

Surface Mount (1)

NO 14

14 hits Apply