Parametric results for: TMS425710 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

NIBBLE 3

4 hits Apply

Access Time-Max (1)

100 ns 4

4 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 3

4 hits Apply

SEPARATE 3

4 hits Apply

R-PDIP-T16 1 R-PQCC-J18 1 R-PZIP-T16 1 R-XDIP-T16 1

4 hits Apply

12.446 mm 1 19.305 mm 1 20.5 mm 1

Min (mm) - Max (mm)

4 hits Apply

Manufacturer (1)

Texas Instruments 4

4 hits Apply

Memory Density (1)

262.144 kbit 4

4 hits Apply

NIBBLE MODE DRAM 4

4 hits Apply

Memory Width (1)

1 4

4 hits Apply

1.0 3

4 hits Apply

1 3

4 hits Apply

16 3 18 1

4 hits Apply

262.144 k 4

4 hits Apply

256000.0 4

4 hits Apply

ASYNCHRONOUS 3

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

256KX1 4

4 hits Apply

3-STATE 4

4 hits Apply

CERAMIC 1 PLASTIC/EPOXY 3

4 hits Apply

DIP 2 QCCJ 1 ZIP 1

4 hits Apply

DIP16,.3 2 LDCC18,.33X.53 1

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 1 IN-LINE 3

4 hits Apply

Refresh Cycles (1)

256 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply