Parametric results for: TMS28F210-10C4FNE4 under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 1

1 hit Apply

BULK ERASE 1

1 hit Apply

YES 1

1 hit Apply

NO 1

1 hit Apply

10000.0 Write/Erase Cycles 1

1 hit Apply

S-PQCC-J44 1

1 hit Apply

16.5862 mm 1

1 hit Apply

Manufacturer (1)

Texas Instruments 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

FLASH 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

44 1

1 hit Apply

65.536 k 1

1 hit Apply

64000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

64KX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

QCCJ 1

1 hit Apply

LDCC44,.7SQ 1

1 hit Apply

SQUARE 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply