Parametric results for: TMS28F210-10C4DBWE under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 2

2 hits Apply

YES 1

2 hits Apply

NO 1

2 hits Apply

10000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-G40 2

2 hits Apply

12.4 mm 2

2 hits Apply

Manufacturer (1)

Texas Instruments 2

2 hits Apply

Memory Density (1)

1.0486 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

40 2

2 hits Apply

65.536 k 2

2 hits Apply

64000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

64KX16 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP1 2

2 hits Apply

TSSOP40,.56,20 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply