Parametric results for: TK60S1A1B1T6RE under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

187.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

3 hits Apply

Drain Current-Max (ID) (1)

60 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

9.25 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

220 pF 2

3 hits Apply

R-PSSO-G2 2

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

180 W 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply