Parametric results for: TH58NVG4S0F under EEPROMs

All Filters JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

R-PBGA-B63 1 R-PDSO-G48 2

3 hits Apply

11 mm 1 18.4 mm 2

Min (mm) - Max (mm)

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Memory Density (1)

17.1799 Gbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 3

3 hits Apply

48 2 63 1

3 hits Apply

2.1475 G 3

3 hits Apply

2.0E9 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

70.0 °C 1 85.0 °C 2

Min (°C) - Max (°C)

3 hits Apply

-40.0 °C 2 0.0 °C 1

Min (°C) - Max (°C)

3 hits Apply

Organization (1)

2GX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

BGA 1 TSOP 2

3 hits Apply

BGA63,10X12,32 1 TSSOP48,.8,20 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1 SMALL OUTLINE, THIN PROFILE 2

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 3

3 hits Apply