Parametric results for: TH50VSF4683AASB under Other Memory ICs

All Filters Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Mixed Memory Type Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 1

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USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8 1

1 hit Apply

R-PBGA-B69 1

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e0 1

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12 mm 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Memory Density (1)

67.1089 Mbit 1

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MEMORY CIRCUIT 1

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Memory Width (1)

16 1

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FLASH+SRAM 1

1 hit Apply

1.0 1

1 hit Apply

69 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

ASYNCHRONOUS 1

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85.0 °C 1

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-30.0 °C 1

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Organization (1)

4MX16 1

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PLASTIC/EPOXY 1

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LFBGA 1

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BGA69,10X12,32 1

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RECTANGULAR 1

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GRID ARRAY, LOW PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

1 hit Apply