Parametric results for: TE28F008B3B110 under Flash Memories

All Filters Access Time-Max Additional Feature Boot Block Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

110 ns 2

2 hits Apply

USER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK 2

2 hits Apply

BOTTOM 2

2 hits Apply

YES 1

2 hits Apply

NO 1

2 hits Apply

100000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-G40 2

2 hits Apply

e0 2

2 hits Apply

18.4 mm 2

2 hits Apply

Manufacturer (2)

Intel Corporation 1 Rochester Electronics LLC 1

2 hits Apply

Memory Density (1)

8.3886 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

8,15 1

2 hits Apply

40 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

1MX8 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP1 1 TSSOP 1

2 hits Apply

TSSOP40,.8,20 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 1 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

2 hits Apply

Sector Size (1)

8K,64K 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply