Parametric results for: TDG100E90BEP under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

100 V 1

1 hit Apply

Drain Current-Max (ID) (1)

90 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

9.5 mΩ 1

1 hit Apply

HIGH ELECTRON MOBILITY 1

1 hit Apply

12 pF 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

R-PBCC-N4 1

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Manufacturer (1)

Teledyne e2v 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply