Parametric results for: TC7920K6-G under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 1

2 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1

2 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

2 hits Apply

Drain-source On Resistance-Max (1)

7 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-PDSO-N12 1

2 hits Apply

e4 1

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 1

2 hits Apply

Number of Elements (1)

4 1

2 hits Apply

Number of Terminals (1)

12 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply