Parametric results for: TC511002Z-10 under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 1

1 hit Apply

SEPARATE 1

1 hit Apply

R-PZIP-T20 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

STATIC COLUMN DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

20 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX1 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

ZIP 1

1 hit Apply

ZIP20,.1 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply