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SI4835DDY-T1-GE3
Vishay Intertechnologies
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$0.4561 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 8.7 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.6 W | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | compliant | EAR99 | Vishay | |||||
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SI4835DDY-T1-E3
Vishay Intertechnologies
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$0.5865 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 8.7 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 5.6 W | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT, MS-012, SOIC-8 | compliant | EAR99 | Vishay | |||||
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SI4835DDY-T1-GE3
Vishay Siliconix
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Check for Price | Yes | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 8.7 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY SILICONIX | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | compliant | EAR99 | SOT | 8 | |||||||
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SI4835DDY-T1-E3
Vishay Siliconix
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Check for Price | Yes | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 8.7 A | 18 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY SILICONIX | ROHS COMPLIANT, SOP-8 | compliant | EAR99 | SOT | 8 |