Parametric results for: Si2333DS under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

12 V 1

4 hits Apply

Drain Current-Max (ID) (1)

4.1 A 1

4 hits Apply

Drain-source On Resistance-Max (1)

32 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

4 hits Apply

300 pF 1

4 hits Apply

TO-236 1

4 hits Apply

R-PDSO-G3 1

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

Vishay Dale 3 Vishay Intertechnologies 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 1

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

ENHANCEMENT MODE 1

4 hits Apply

150.0 °C 1

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

4 hits Apply

Surface Mount (1)

YES 1

4 hits Apply