Parametric results for: STV160NF02LT4 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

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1500.0 mJ 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain Current-Max (ID) (1)

160 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

3.5 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-G10 1

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e3 1

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Manufacturer (1)

STMicroelectronics 1

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3 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

10 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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250 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply