Parametric results for: STP8NM60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

5 hits Apply

200.0 mJ 5

5 hits Apply

ISOLATED 1

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

600 V 5

5 hits Apply

Drain Current-Max (ID) (2)

7 A 2 8 A 3

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (3)

650 mΩ 1 700 mΩ 1 1 Ω 3

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e3 5

5 hits Apply

Manufacturer (1)

STMicroelectronics 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Obsolete 5

5 hits Apply

Yes 4

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

30 W 1 70 W 2 100 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply