Parametric results for: STP55N06 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 2

4 hits Apply

500.0 mJ 2 520.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

ISOLATED 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

4 hits Apply

Drain Current-Max (ID) (2)

30 A 2 55 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

23 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

350 pF 2

4 hits Apply

TO-220AB 3

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 2

4 hits Apply

Manufacturer (1)

STMicroelectronics 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1 175.0 °C 3

Min (°C) - Max (°C)

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Yes 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

40 W 1 150 W 1

Min (W) - Max (W)

4 hits Apply

45 W 1 150 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply