Parametric results for: STD4NK80Z under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

3 hits Apply

190.0 mJ 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

800 V 2

3 hits Apply

Drain Current-Max (ID) (1)

3 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-251AA 1 TO-252AA 1

3 hits Apply

R-PSIP-T3 1 R-PSSO-G2 1

3 hits Apply

e3 3

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

2 1 3 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 1 SMALL OUTLINE 1

3 hits Apply

Active 3

3 hits Apply

260 1 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

80 W 3

3 hits Apply

Surface Mount (2)

NO 1 YES 2

3 hits Apply