Parametric results for: STB60NF06 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 LOW THRESHOLD, AVALANCHE RATED 1

6 hits Apply

320.0 mJ 2 360.0 mJ 4

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 2 ISOLATED 2

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

60 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

16 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-262AA 1 TO-263AB 2

6 hits Apply

R-PSIP-T3 1 R-PSSO-G2 5

6 hits Apply

e3 6

6 hits Apply

Manufacturer (1)

STMicroelectronics 6

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

2 5 3 1

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

IN-LINE 1 SMALL OUTLINE 5

6 hits Apply

Active 5 Obsolete 1

6 hits Apply

Yes 3

6 hits Apply

245 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

110 W 3 150 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (2)

NO 1 YES 5

6 hits Apply