Parametric results for: STAC244 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 8

13 hits Apply

Configuration (1)

SINGLE 8

13 hits Apply

DS Breakdown Voltage-Min (2)

125 V 3 130 V 5

Min (V) - Max (V)

13 hits Apply

Drain Current-Max (ID) (1)

40 A 8

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

13 hits Apply

Highest Frequency Band (2)

ULTRA HIGH FREQUENCY BAND 7 VERY HIGH FREQUENCY BAND 1

13 hits Apply

R-CDFM-F4 1 R-CDFP-F4 2 R-XDFM-F4 1

13 hits Apply

Manufacturer (1)

STMicroelectronics 13

13 hits Apply

Number of Elements (1)

1 8

13 hits Apply

Number of Terminals (1)

4 4

13 hits Apply

ENHANCEMENT MODE 8

13 hits Apply

200.0 °C 7

13 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 UNSPECIFIED 1

13 hits Apply

RECTANGULAR 4

13 hits Apply

FLANGE MOUNT 2 FLATPACK 2

13 hits Apply

Active 3 Obsolete 10

13 hits Apply

NOT SPECIFIED 10

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

13 hits Apply

625 W 5 795 W 2

Min (W) - Max (W)

13 hits Apply

Surface Mount (1)

YES 6

13 hits Apply