Parametric results for: SSP4N80A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

256.0 mJ 3 324.0 mJ 3

Min (mJ) - Max (mJ)

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

800 V 6

6 hits Apply

Drain Current-Max (ID) (2)

4 A 3 4.5 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

3 Ω 3 4 Ω 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

30 pF 1 42 pF 1

Min (pF) - Max (pF)

6 hits Apply

TO-220AB 5

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 4 Samsung Semiconductor 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

120 W 1 130 W 1

Min (W) - Max (W)

6 hits Apply

120 W 2 130 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply