Parametric results for: SSP3N80 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

240.0 mJ 4

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

800 V 5

5 hits Apply

Drain Current-Max (ID) (1)

3 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

4.8 Ω 4 5 Ω 1

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e3 1

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 Rochester Electronics LLC 1 Samsung Semiconductor 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

75 W 1 100 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply