Parametric results for: SSM6N15FU under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 5

7 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

7 hits Apply

Drain Current-Max (ID) (1)

100 mA 7

7 hits Apply

Drain-source On Resistance-Max (1)

7 Ω 5

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

3.6 pF 2

7 hits Apply

R-PDSO-G6 5

7 hits Apply

e0 1

7 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 7

7 hits Apply

Number of Elements (1)

2 5

7 hits Apply

Number of Terminals (1)

6 5

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

150.0 °C 4

7 hits Apply

PLASTIC/EPOXY 5

7 hits Apply

RECTANGULAR 5

7 hits Apply

SMALL OUTLINE 5

7 hits Apply

Active 4 Obsolete 3

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

200 mW 2

7 hits Apply

200 mW 4

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply