Parametric results for: SSH6N55 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

570.0 mJ 2

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

550 V 2

2 hits Apply

Drain Current-Max (ID) (1)

6 A 2

2 hits Apply

Drain-source On Resistance-Max (2)

1.2 Ω 1 1.8 Ω 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

150 pF 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

125 W 2

2 hits Apply

125 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply