Parametric results for: SSD2009 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

50 V 3

3 hits Apply

Drain Current-Max (ID) (1)

3 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

130 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 Samsung Semiconductor 1

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

2 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply