Filter Your Search
1 - 10 of 157 results
|
SS310
SPC Multicomp
|
$0.0339 | Active | 3 A | 850 mV | 600 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | GENERAL PURPOSE | 100 A | 1 | R-PDSO-C2 | DO-214AB | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | C BEND | DUAL | MULTICOMP PRO | SMC, 2 PIN | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||
|
SS310
Yangzhou Yangjie Electronics Co Ltd
|
$0.0733 | Yes | Active | 3 A | 850 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | FAST RECOVERY | 70 A | 1 | R-PDSO-C2 | e3 | DO-214AB | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | C BEND | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | SMC, 2 PIN | compliant | EAR99 | 8541.10.00.80 | |||||||||||||
|
SS310+
SPC Multicomp
|
$0.0956 | Active | 3 A | 850 mV | 1 mA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | FREE WHEELING DIODE | GENERAL PURPOSE | 80 A | 1 | 100 V | R-PDSO-C2 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | C BEND | DUAL | SPC TECHNOLOGY/ MULTICOMP | R-PDSO-C2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||
|
SS310
Taiwan Semiconductor
|
$0.0959 | Yes | Active | 3 A | 790 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS | EFFICIENCY | 70 A | 1 | Not Qualified | R-PDSO-C2 | e3 | DO-214AB | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | TAIWAN SEMICONDUCTOR CO LTD | not_compliant | EAR99 | 8541.10.00.80 | Taiwan Semiconductor | ||||||||||
|
SS310LW
Taiwan Semiconductor
|
$0.1207 | Yes | Active | 3 A | 850 mV | 20 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS | EFFICIENCY | 80 A | 1 | R-PDSO-F2 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TAIWAN SEMICONDUCTOR CO LTD | SOD-123W, 2 PIN | unknown | Taiwan Semiconductor | |||||||||||||||||
|
SS310LWH
Taiwan Semiconductor
|
$0.1627 | Yes | Active | 3 A | 850 mV | 20 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | FREE WHEELING DIODE, LOW POWER LOSS | EFFICIENCY | 80 A | 1 | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | TAIWAN SEMICONDUCTOR CO LTD | SOD-123W, 2 PIN | not_compliant | Taiwan Semiconductor | |||||||||||||
|
NRVTSS3100ET3G
onsemi
|
$0.1784 | Yes | Obsolete | 3 A | 995 mV | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | FREE WHEELING DIODE, LOW POWER LOSS | EFFICIENCY | 90 A | 1 | R-PDSO-C2 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | ONSEMI | SMB, 2 PIN | not_compliant | EAR99 | 8541.10.00.80 | onsemi | SMB | 403A-03 | |||||||
|
SS310FSH
Taiwan Semiconductor
|
$0.2123 | Yes | Active | 3 A | 880 mV | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS | EFFICIENCY | 70 A | 1 | R-PDSO-F2 | AEC-Q101 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TAIWAN SEMICONDUCTOR CO LTD | SOD-128, 2 PIN | unknown | Taiwan Semiconductor | ||||||||||||||||
|
SS310ALH
Taiwan Semiconductor
|
$0.2123 | Yes | Active | 3 A | 880 mV | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS | EFFICIENCY | 70 A | 1 | R-PDSO-F2 | AEC-Q101 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TAIWAN SEMICONDUCTOR CO LTD | SMA, 2 PIN | unknown | Taiwan Semiconductor | ||||||||||||||||
|
SS310LWHRVG
Taiwan Semiconductor
|
$0.2141 | Yes | Obsolete | 3 A | 850 mV | 20 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SCHOTTKY | LOW POWER LOSS | EFFICIENCY | 80 A | 1 | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | TAIWAN SEMICONDUCTOR CO LTD | compliant | EAR99 | 8541.10.00.80 | Taiwan Semiconductor | 2016-03-14 |