Parametric results for: SQS850EN-T1_GE3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

26.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

2 hits Apply

Drain Current-Max (ID) (1)

12 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

21.5 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

S-PDSO-F5 2

2 hits Apply

Manufacturer (1)

Vishay Intertechnologies 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

5 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Not Recommended 2

2 hits Apply

Yes 1

2 hits Apply

240 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply