Parametric results for: SPP80N06S2-09 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

2 hits Apply

370.0 mJ 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

55 V 1

2 hits Apply

Drain Current-Max (ID) (2)

70 A 1 80 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

9.1 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-220AB 1

2 hits Apply

R-PSFM-T3 1

2 hits Apply

e0 1

2 hits Apply

Manufacturer (1)

Infineon Technologies AG 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

190 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply