Parametric results for: SPD08N05L under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

3 hits Apply

35.0 mJ 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

3 hits Apply

Drain Current-Max (ID) (2)

8 A 1 8.4 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

150 mΩ 2 180 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-252 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 Rochester Electronics LLC 1 Siemens 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

24 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply