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SPB100N03S203GATMA1
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 100 A | 3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | compliant | EAR99 | Infineon | ||||||||||||
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SPB100N03S2-03G
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 100 A | 3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 1 | 245 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | D2PAK | 4 | |||||||
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SPB100N03S2-03
Infineon Technologies AG
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 100 A | 3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | Infineon | D2PAK | 4 |