Parametric results for: SPA08N under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3 AVALANCHE RATED, HIGH VOLTAGE 2

5 hits Apply

230.0 mJ 3 340.0 mJ 2

Min (mJ) - Max (mJ)

5 hits Apply

ISOLATED 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (2)

500 V 3 800 V 2

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

7.6 A 3 8 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

600 mΩ 3 650 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e3 3

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 Rochester Electronics LLC 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Active 1 Not Recommended 2 Obsolete 2

5 hits Apply

No 1 Yes 4

5 hits Apply

260 1 NOT SPECIFIED 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

32 W 1 40 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply