Parametric results for: SP000216361 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

6 hits Apply

670.0 mJ 1 690.0 mJ 1

Min (mJ) - Max (mJ)

6 hits Apply

ISOLATED 2

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (2)

600 V 1 800 V 1

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (2)

17 A 1 20.7 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

190 mΩ 1 290 mΩ 1

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

6 hits Apply

TO-220AB 2

6 hits Apply

R-PSFM-T3 2

6 hits Apply

e3 1

6 hits Apply

Manufacturer (1)

Infineon Technologies AG 6

6 hits Apply

Number of Elements (1)

1 2

6 hits Apply

Number of Terminals (1)

3 2

6 hits Apply

ENHANCEMENT MODE 2

6 hits Apply

PLASTIC/EPOXY 2

6 hits Apply

RECTANGULAR 2

6 hits Apply

FLANGE MOUNT 2

6 hits Apply

Active 4 Not Recommended 1 Obsolete 1

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

6 hits Apply

Surface Mount (1)

NO 2

6 hits Apply