Parametric results for: SMDB03 under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Max Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Capacitance-Min Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

LOW CAPACITANCE 4

37 hits Apply

7 V 2

37 hits Apply

Breakdown Voltage-Min (1)

4 V 35

37 hits Apply

Breakdown Voltage-Nom (1)

4 V 2

37 hits Apply

ISOLATED 6

37 hits Apply

Clamping Voltage-Max (2)

7.5 V 1 9 V 2

Min (V) - Max (V)

37 hits Apply

Configuration (2)

4 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS 4 SEPARATE, 4 ELEMENTS 31

37 hits Apply

Diode Capacitance-Min (1)

1.2 nF 1

37 hits Apply

Diode Element Material (1)

SILICON 35

37 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 35

37 hits Apply

R-PDSO-G8 35

37 hits Apply

e0 10 e3 6

37 hits Apply

Manufacturer (6)

Microchip Technology Inc 6 Microsemi Corporation 10 ProTek Devices 1 Sangdest Microelectronics (Nanjing) Co Ltd 14 Secos Corporation 2 Sensitron Semiconductors 4

37 hits Apply

Number of Elements (2)

4 31 8 4

Min - Max

37 hits Apply

Polarity (2)

BIDIRECTIONAL 19 UNIDIRECTIONAL 16

37 hits Apply

Rep Pk Reverse Voltage-Max (1)

3.3 V 31

37 hits Apply

Reverse Current-Max (1)

125 µA 1

37 hits Apply

Surface Mount (1)

YES 35

37 hits Apply

Technology (1)

AVALANCHE 35

37 hits Apply