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SMBJ10A-E3/52
Vishay Intertechnologies
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$0.1050 | Yes | Active | 3.5 V | 17 V | 5 µA | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | UL RECOGNIZED | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | C BEND | DUAL | VISHAY INTERTECHNOLOGY INC | SMB, 2 PIN | not_compliant | Vishay | |||||||
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SMBJ10A-E3/5B
Vishay Semiconductors
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$0.1737 | Yes | Yes | Active | 3.5 V | 17 V | 5 µA | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | UL RECOGNIZED | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | C BEND | DUAL | VISHAY SEMICONDUCTORS | R-PDSO-C2 | unknown | Vishay | DO-214AA | 2 | EAR99 | 8541.10.00.50 | ||
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SMBJ10A-E3/52
Vishay Semiconductors
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$0.1864 | Yes | Yes | Active | 3.5 V | 17 V | 5 µA | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | UL RECOGNIZED | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | C BEND | DUAL | VISHAY SEMICONDUCTORS | R-PDSO-C2 | unknown | Vishay | DO-214AA | 2 | EAR99 | 8541.10.00.50 | ||
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SMBJ10AE3/TR13
Microchip Technology Inc
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$0.2920 | Yes | Active | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | TR, 7 INCH: 750 | 12.3 V | 600 W | R-PDSO-C2 | e3 | IEC-61000-4-2, 4-4, 4-5 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | SMBJ, 2 PIN | compliant | ||||||||||||||
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MSMBJ10AE3
Microsemi Corporation
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$1.0254 | Yes | Yes | Transferred | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | DO-214AA | 2 | EAR99 | 8541.10.00.50 | |||||||||
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MSMBJ10AE3
Microchip Technology Inc
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$1.1300 | Yes | Active | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | ||||||||||||||
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MASMBJ10AE3
Microchip Technology Inc
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$5.4078 | Yes | Active | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | 12.3 V | 600 W | R-PDSO-C2 | e3 | IEC-61000-4-2, 4-4, 4-5; MIL-19500 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | SMBJ, 2 PIN | not_compliant | |||||||||||||||
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MASMBJ10AE3
Microsemi Corporation
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$5.6573 | Yes | Yes | Transferred | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | 12.3 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | MIL-19500 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC PACKAGE-2 | not_compliant | DO-214AA | 2 | EAR99 | 8541.10.00.50 | |||||||||
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MXLSMBJ10AE3
Microsemi Corporation
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$10.2476 | Yes | Yes | Transferred | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | DO-214AA | 2 | EAR99 | 8541.10.00.50 | |||||||||
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MXSMBJ10AE3
Microsemi Corporation
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$23.4630 | Yes | Yes | Transferred | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | 12.3 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | MIL-19500 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC PACKAGE-2 | not_compliant | DO-214AA | 2 | EAR99 | 8541.10.00.50 |