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1 - 10 of 12 results
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SIHP22N60EF-GE3
Vishay Intertechnologies
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$2.5535 | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 19 A | 182 mΩ | AVALANCHE RATED | 144 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 179 W | 46 A | SWITCHING | SILICON | 137 ns | 72 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | , | unknown | EAR99 | 2019-02-07 | Vishay | |||||||||||||
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SIHP22N60AE-GE3
Vishay Intertechnologies
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$2.8588 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 20 A | 180 mΩ | 204 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 179 W | 49 A | SWITCHING | SILICON | 132 ns | 104 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | 2016-09-25 | Vishay | ||||||||||||
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SIHP22N65E-GE3
Vishay Intertechnologies
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$2.9809 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 22 A | 180 mΩ | 691 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | |||||||||||||||||||
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SIHP22N60E-GE3
Vishay Intertechnologies
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$3.5526 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 A | 180 mΩ | AVALANCHE RATED | 367 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 227 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT PACKAGE-3 | compliant | EAR99 | Vishay | 8541.29.00.95 | ||||||||||||||
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SIHP22N60AEL-GE3
Vishay Intertechnologies
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 A | 180 mΩ | 183 mJ | 6 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 48 A | SWITCHING | SILICON | 228 ns | 102 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | 2018-03-27 | Vishay | ||||||||||||
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SIHP22N60S-E3
Vishay Siliconix
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 22 A | 190 mΩ | 690 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 65 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | FLANGE MOUNT, R-PSFM-T3 | unknown | EAR99 | TO-220AB | 3 | ||||||||||||
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SIHP22N60E-GE3
Vishay Siliconix
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 A | 180 mΩ | AVALANCHE RATED | 367 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 227 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | FLANGE MOUNT, R-PSFM-T3 | unknown | EAR99 | 8541.29.00.95 | ||||||||||||||||
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SIHP22N60S-E3
Vishay Intertechnologies
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 22 A | 190 mΩ | 690 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 65 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT, TO-220, 3 PIN | compliant | EAR99 | Vishay | ||||||||||||||
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SIHP22N60E-E3
Vishay Intertechnologies
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 A | 180 mΩ | AVALANCHE RATED | 367 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 227 W | 56 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT PACKAGE-3 | compliant | EAR99 | Vishay | |||||||||||||||
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SIHP22N60AE-BE3
Vishay Intertechnologies
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 20 A | 180 mΩ | 204 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 179 W | 49 A | SWITCHING | SILICON | 132 ns | 104 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay |