Parametric results for: SIHP22N under Power Field-Effect Transistors

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Manufacturer Part Number: sihp22n
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SIHP22N60EF-GE3
Vishay Intertechnologies
$2.5535 Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 19 A 182 mΩ AVALANCHE RATED 144 mJ 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 179 W 46 A SWITCHING SILICON 137 ns 72 ns TO-220AB R-PSFM-T3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC , unknown EAR99 2019-02-07 Vishay
SIHP22N60AE-GE3
Vishay Intertechnologies
$2.8588 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 20 A 180 mΩ 204 mJ 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 179 W 49 A SWITCHING SILICON 132 ns 104 ns TO-220AB R-PSFM-T3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 2016-09-25 Vishay
SIHP22N65E-GE3
Vishay Intertechnologies
$2.9809 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 22 A 180 mΩ 691 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 56 A SWITCHING SILICON TO-220AB R-PSFM-T3 NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC FLANGE MOUNT, R-PSFM-T3 compliant EAR99
SIHP22N60E-GE3
Vishay Intertechnologies
$3.5526 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 21 A 180 mΩ AVALANCHE RATED 367 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 227 W 56 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT PACKAGE-3 compliant EAR99 Vishay 8541.29.00.95
SIHP22N60AEL-GE3
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 21 A 180 mΩ 183 mJ 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 208 W 48 A SWITCHING SILICON 228 ns 102 ns TO-220AB R-PSFM-T3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 2018-03-27 Vishay
SIHP22N60S-E3
Vishay Siliconix
Check for Price Yes Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 22 A 190 mΩ 690 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 65 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE VISHAY SILICONIX FLANGE MOUNT, R-PSFM-T3 unknown EAR99 TO-220AB 3
SIHP22N60E-GE3
Vishay Siliconix
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 21 A 180 mΩ AVALANCHE RATED 367 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 227 W 56 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY SILICONIX FLANGE MOUNT, R-PSFM-T3 unknown EAR99 8541.29.00.95
SIHP22N60S-E3
Vishay Intertechnologies
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 22 A 190 mΩ 690 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 65 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT, TO-220, 3 PIN compliant EAR99 Vishay
SIHP22N60E-E3
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 21 A 180 mΩ AVALANCHE RATED 367 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 227 W 56 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC ROHS COMPLIANT PACKAGE-3 compliant EAR99 Vishay
SIHP22N60AE-BE3
Vishay Intertechnologies
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 20 A 180 mΩ 204 mJ 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 179 W 49 A SWITCHING SILICON 132 ns 104 ns TO-220AB R-PSFM-T3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay