Parametric results for: SIHF640 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 5

5 hits Apply

580.0 mJ 5

5 hits Apply

DRAIN 2

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 5

5 hits Apply

Drain Current-Max (ID) (1)

18 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-262AA 3 TO-263AB 2

5 hits Apply

R-PSIP-T3 3 R-PSSO-G2 2

5 hits Apply

e0 1

5 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 3

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

2 2 3 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 3 SMALL OUTLINE 2

5 hits Apply

Active 5

5 hits Apply

No 1 Yes 2

5 hits Apply

260 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

130 W 5

5 hits Apply

Surface Mount (2)

NO 3 YES 2

5 hits Apply