Parametric results for: SIDR1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

180.0 mJ 1

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

25 V 1

4 hits Apply

Drain Current-Max (ID) (1)

100 A 1

4 hits Apply

Drain-source On Resistance-Max (1)

0.9 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

4 hits Apply

510 pF 1

4 hits Apply

R-PDSO-N8 1

4 hits Apply

Manufacturer (1)

Vishay Intertechnologies 4

4 hits Apply

Number of Elements (1)

1 1

4 hits Apply

Number of Terminals (1)

8 1

4 hits Apply

ENHANCEMENT MODE 1

4 hits Apply

150.0 °C 1

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 4

4 hits Apply

260 2 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

4 hits Apply

125 W 1

4 hits Apply

Surface Mount (1)

YES 1

4 hits Apply