Parametric results for: SIA425EDJ-T1-GE3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

2 hits Apply

Drain Current-Max (ID) (1)

4.5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

S-PDSO-N6 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

6 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

15.6 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply