Parametric results for: SI6410DQ under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

3 hits Apply

Drain Current-Max (ID) (1)

7.8 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

MO-153AA 1

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Temic Semiconductors 1 Vishay Intertechnologies 1

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

1.5 W 1

3 hits Apply

1.4 W 1 1.5 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply